SiC power MOSFETs performance, robustness and technology maturity

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Technology for Controlling Trench Shape in SiC Power MOSFETs

As the worldwide consumption of energy is increases and the global environment steadily deteriorates, society must find more efficient ways to utilize energy in order to achieve sustainable advances. Accordingly, the field of power electronics is of vital importance, and huge advances in power semiconductor devices are anticipated. Power semiconductor devices that use silicon (Si) are said to b...

A study of SiC Power BJT performance and robustness

This paper proposes an investigation of 1200 V rated transistors with the twofold purpose of assessing their performance and robustness under representative operational conditions and of extracting guidelines for the design of reliable multi-chip power electronics modules based on SiC technology. It includes a thorough analysis of the devices steady-state and switching characteristics, as well ...

Thermal instability effects in SiC Power MOSFETs

Silicon carbide (SiC) power MOSFETs are characterised by potentially thermally unstable behaviour over a broad range of bias conditions. In the past, such behaviour has been shown for silicon (Si) MOSFETs to be related to a reduction of Safe Operating Area at higher drain–source bias voltages. For SiC MOSFETs no characterisation exists yet. This paper presents a thorough experimental investigat...

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

This paper presents an extensive electro-thermal characterisation of latest generation Silicon Carbide (SiC) power MOSFETs under Unclamped Inductive Switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their ageing under repetitive stress conditions. Both a functional and a structural charact...